
- Frequency Range from DC to 26.5 GHz
- Power Handling up to 250 Watts
- Choose BeO, ALN, Alumina and CVD Diamond Substrates
- Tin/Lead, Lead Free, or Solder Fused Plated
- Tape and Reel Packaging Available
- High Reliability Versions Available
Smiths Interconnect|EMC's high power chip terminations are available in both thick film and thin film resistor designs, offering you flexibility needed to match the correct part more closely to your specific application. All designs have been optimized for RF performance and thus minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been minimized to ensure reliable operation under high temperature. Low part-to-part variation means your circuit performs consistently and eliminate the need for external tuning.
These high power chip terminations feature a ground edge wrap to facilitate maximum heat dissipation and are ideal for circulator and combiner applications.
High Power Chip Terminations | |||||||
Part Number | Operating Frequency | VSWR | Max. Power | Length | Width | Substrate | Data Sheet |
82A3059F | DC - 2.5 GHz | 1.20 | 250 W | 9.53 mm | 6.35 mm | BeO | 82A3059F |
CT1206ALNF | DC - 4.0 GHz | 1.25 | 15 W | 3.05 mm | 1.52 mm | AlN | 1010145 |
CT2010ALNF | DC - 4.0 GHz | 1.25 | 20 W | 5.08 mm | 2.54 mm | AlN | 1010135 |
CT2335H | DC - 8.0 GHz | 1.25 | 100 W | 5.84 mm | 8.89 mm | BeO | CT2335H |
CT3725ALNF | DC - 2.0 GHz | 1.25 | 150 W | 9.40 mm | 6.22 mm | AlN | 1010715 |
CT3737TALNF | DC - 3.0 GHz | 1.15 | 180 W | 9.45 mm | 9.45 mm | AlN | 1010995 |