menu

Search results

You are here

High Power Chip Terminations

×

Status message

We noticed you are browsing from out of Asia, we would like to redirect you to our international site.
Yes No
High Power Chip Terminations
  • Frequency Range from DC to 26.5 GHz
  • Power Handling up to 250 Watts
  • Choose BeO, ALN, Alumina and CVD Diamond Substrates
  • Tin/Lead, Lead Free, or Solder Fused Plated
  • Tape and Reel Packaging Available
  • High Reliability Versions Available

Smiths Interconnect|EMC's high power chip terminations are available in both thick film and thin film resistor designs, offering you flexibility needed to match the correct part more closely to your specific application. All designs have been optimized for RF performance and thus minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been minimized to ensure reliable operation under high temperature. Low part-to-part variation means your circuit performs consistently and eliminate the need for external tuning.

These high power chip terminations feature a ground edge wrap to facilitate maximum heat dissipation and are ideal for circulator and combiner applications.

High Power Chip Terminations  
Part Number Operating Frequency VSWR Max. Power Length Width Substrate Data Sheet
82A3059F DC - 2.5 GHz 1.20 250 W 9.53 mm 6.35 mm BeO 82A3059F
CT1206ALNF DC - 4.0 GHz 1.25 15 W 3.05 mm 1.52 mm AlN 1010145
CT2010ALNF DC - 4.0 GHz 1.25 20 W 5.08 mm 2.54 mm AlN 1010135
CT2335H DC - 8.0 GHz 1.25 100 W 5.84 mm 8.89 mm BeO CT2335H
CT3725ALNF DC - 2.0 GHz 1.25 150 W 9.40 mm 6.22 mm AlN 1010715
CT3737TALNF DC - 3.0 GHz 1.15 180 W 9.45 mm 9.45 mm AlN 1010995
  • Broadcast (TV and Radio)
  • High Power Amplifier
  • High Power Filters
  • Instrumentation
  • Isolators
  • Remote Termination
  • Satellite Communication
  • Splitters / Combiners